Specific features of Hall effect in capped multilayer pHEMT structure of AlxGa1−xAs/InxGa1−xAs/GaAs-Reference-Cited by-同舟云学术

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Specific features of Hall effect in capped multilayer pHEMT structure of AlxGa1−xAs/InxGa1−xAs/GaAs

Published:2005-12 Issue:29-30 Volume:59 Page:3810-3812
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Soetedjo Hariyadi,Jusoh Mohd. Sazli,Sabtu Idris,Yahya Mohd. Razman,Mat Abdul Fatah Awang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's

2. Investigation of two-dimensional electron gas concentration in selectively doped n-AlxGa1−xAs/InyGa1−yAs/GaAs heterostructures

3. The state-of-the-art of GaAs and InP power devices and amplifiers

4. Physical mechanisms on the abnormal gate-leakage currents in pseudomorphic high electron mobility transistors

5. Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the low contact resistance via alloying of Au/Ni/AuGe-GaAs contact structures;Materials Letters;2022-07

2. Surface‐interface analysis of In x Ga 1‐x As/InP heterostructure in positive and negative mismatch system;Surface and Interface Analysis;2019-01-14

3. Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD;Microelectronics Journal;2006-10

4. Current–voltage behavior of AlGaAs/InGaAs pHEMT structures and the effect of optical illumination;Microelectronics Journal;2006-06

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