The state-of-the-art of GaAs and InP power devices and amplifiers-Reference-Cited by-同舟云学术

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The state-of-the-art of GaAs and InP power devices and amplifiers

Published:2001-03 Issue:3 Volume:48 Page:472-478
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chanh Nguyen ,Micovic M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/19604/00906438.pdf?arnumber=906438

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells;Journal of Alloys and Compounds;2024-05

2. Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode;Journal of Materials Science: Materials in Electronics;2021-03-26

3. Integrated Substrates: Millimeter-Wave Transistor Technologies;Smart Sensors, Measurement and Instrumentation;2019

4. Technologies for Low-Noise Amplifiers in the Millimeter-Wave Regime;Signals and Communication Technology;2017-11-12

5. Review of Telecommunication Aspects for Power Amplifier Design;Signals and Communication Technology;2015-12-30

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