Surface‐interface analysis of In x Ga 1‐x As/InP heterostructure in positive and negative mismatch system-Reference-Cited by-同舟云学术

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Surface‐interface analysis of In x Ga 1‐x As/InP heterostructure in positive and negative mismatch system

Published:2019-01-14 Issue:5 Volume:51 Page:498-505
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Zhao Liang¹²,Guo Zuoxing¹²,Zhang Min²,Yang Shen²,Zhao Lei¹^ORCID

Affiliation:

1. Key Laboratory of Automobile Materials (Ministry of Education)Jilin University Changchun China

2. College of Materials Science and EngineeringJilin University, Nanling Campus Changchun China

Funder

State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University

Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials, Ministry of Education, Jilin University

National Nature Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.6609

Reference36 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Band parameters for III–V compound semiconductors and their alloys

3. Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

4. Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors

5. Advances in InGaAs/InP single-photon detector systems for quantum communication

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1. Influence of Indium Composition on InAlAs QCLs;2024-07-25

2. Interfacial Engineering for Advanced Functional Materials: Surfaces, Interfaces, and Applications;Results in Engineering;2024-06

3. Formation mechanism and elimination of needle defects on CdZnTe epitaxial films prepared by close-spaced sublimation;Applied Surface Science;2024-06

4. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01

5. Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry;Brazilian Journal of Physics;2022-08-24

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