Current–voltage behavior of AlGaAs/InGaAs pHEMT structures and the effect of optical illumination
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference9 articles.
1. Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's
2. Investigation of two-dimensional electron gas concentration in selectively doped n-AlxGa1−xAs/InyGa1−yAs/GaAs heterostructures
3. The state-of-the-art of GaAs and InP power devices and amplifiers
4. Microwave noise parameters of pseudomorphic GaInAs HEMTs under optical illumination
5. Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
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1. Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric;Solid-State Electronics;2010-08
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