Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
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3. High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching;Wang;J Vac Sci Technol B,2007
4. Planar GaAs MOSFET using wet thermally oxidized AlGaAs as gate insulator;Yu;IEE Electron Lett,2000
5. High-pressure thermal oxidation of n-GaAs in an atmosphere of oxygen and water vapor;Basu;J Appl Phys,1988
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