Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs fabricated by selective wet etching
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19951474?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
2. Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier
3. Plasma and wet chemical etching of In0.5Ga0.5P
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2. Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor;Solid-State Electronics;2011-03
3. Control of Threshold Voltage and Suppressed Leakage Current on AlGaAs∕InGaAs PHEMT by Liquid Phase Oxidation;Electrochemical and Solid-State Letters;2011
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5. Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature;Journal of The Electrochemical Society;2007
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