High‐pressure thermal oxidation ofn‐GaAs in an atmosphere of oxygen and water vapor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340325
Reference11 articles.
1. On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
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4. GaAs surface chemistry – a review
5. New anodic native oxide of GaAs with improved dielectric and interface properties
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1. Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation;ECS Journal of Solid State Science and Technology;2014
2. Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric;Solid-State Electronics;2010-08
3. Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation;Solid-State Electronics;2008-02
4. Near-Room-Temperature Selective Oxidation on InAlAs and Application to In[sub 0.52]Al[sub 0.48]As∕In[sub 0.53]Ga[sub 0.47]As Metamorphic HEMTs;Journal of The Electrochemical Society;2007
5. Study of diffusion barriers for Au metal on liquid phase oxidized GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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