On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states-Reference-Cited by-同舟云学术

On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

Published:1983-01 Issue:1-3 Volume:103 Page:119-140
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hasegawa H,Sawada T

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference82 articles.

1. Dynamic properties of interface‐state bands in GaAs anodic MOS system

2. Electrical modeling of compound semiconductor interface for FET device assessment

3. Photoionization and thermal activation of compound semiconductor MOS interfaces and origin of interface states

4. New and unified model for Schottky barrier and III–V insulator interface states formation

5. Unified defect model and beyond

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