On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference82 articles.
1. Dynamic properties of interface‐state bands in GaAs anodic MOS system
2. Electrical modeling of compound semiconductor interface for FET device assessment
3. Photoionization and thermal activation of compound semiconductor MOS interfaces and origin of interface states
4. New and unified model for Schottky barrier and III–V insulator interface states formation
5. Unified defect model and beyond
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