Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT-Reference-Cited by-同舟云学术

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Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT

Published:2005-01 Issue:1 Volume:49 Page:19-24
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kang In-Ho,Kim Jung-Hoon,Kim Won-Bae,Song Jong-In

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Effect of selective hydrogen pretreatment on the characteristics of AlGaAs/InGaAs p-HEMTs;Kang;J. Korean Phys. Soc,2003

2. Tsugunori O. Hydrogen-related issues in GaAs Schottky contacts. The International Conference on Compound Semiconductor Manufacturing Technology Digest, 1999

3. Dwayne R, Sammy K. Hydrogen effects on GaAs microwave semiconductors. GaAs Reliability Workshop, 1997. p. 66–71

4. HEMT degradation in hydrogen gas;Chao;IEEE Trans. Electron. Dev. Lett.,1994

5. Eng DC, Scarpulla J. Hydrogen sensitivity of GaAs HEMT amplifier: the effect of bias mode. GaAs Reliability Workshop, 1997. p. 89–93

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches;Solid-State Electronics;2015-03

2. Specific features of Hall effect in capped multilayer pHEMT structure of AlxGa1−xAs/InxGa1−xAs/GaAs;Materials Letters;2005-12

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