Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. The state-of-the-art of GaAs and InP power devices and amplifiers
2. Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's
3. Investigation of two-dimensional electron gas concentration in selectively doped n-AlxGa1−xAs/InyGa1−yAs/GaAs heterostructures
4. Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers
5. Structural characterisation of remelt liquid phase epitaxy (LPE) grown AlGaAs heteroepitaxial layer
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