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Effect of layer structure on the electrical properties of contacts to p-type In0.53Ga0.47As/InP

  • Published:1997-04 Issue:1-2 Volume:298 Page:9-13
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Leech Patrick W,Reeves Geoffrey K

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures;Semiconductor Science and Technology;2022-04-13

2. Electrical Scanning Probe Microscopy: Investigating the Inner Workings of Electronic and Optoelectronic Devices;Critical Reviews in Solid State and Materials Sciences;2005-04

3. In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers;Applied Physics Letters;2005-02-21

4. Application to Semiconductor Devices;Springer Series in Surface Sciences;2003

5. Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs;Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)
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