In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1869541
Reference16 articles.
1. D. A. Neamen, Semiconductor Physics and Devices: Basic Principles (McGraw-Hill, Inc., New York, 2003), 3rd ed.
2. Effect of layer structure on the electrical properties of contacts to p-type In0.53Ga0.47As/InP
3. Graded band‐gap ohmic contacts ton‐ andp‐type InP
4. A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors
5. Low resistance Ohmic contact scheme (∼μΩ cm2) top-InP
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