Quantitative analysis of arsenic losses during the formation of Au(Zn)/p‐GaAs ohmic contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352778
Reference23 articles.
1. Development of ohmic contact materials for GaAs integrated circuits
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3. Thermally stable ohmic contacts top‐type GaAs. IX. NiInW and NiIn(Mn)W contact metals
4. Ohmic contacts to III–V compound semiconductors
5. Improved ohmic properties of Au–Ge Contacts to thin n-GaAs layers alloyed with an SiO2 overlayer
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