Development of ohmic contact materials for GaAs integrated circuits-Reference-Cited by-同舟云学术

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Development of ohmic contact materials for GaAs integrated circuits

Published:1990-01 Issue:5 Volume:5 Page:273-317
ISSN:0920-2307
Container-title:Materials Science Reports
language:en
Short-container-title:Materials Science Reports

Author:

Murakami Masanori

Publisher

Elsevier BV

Subject

General Engineering

Reference235 articles.

1. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

2. Alloyed ohmic contacts to GaAs

3. Gallium Arsenide Processing Techniques;Williams,1984

4. Physics and Chemistry of III–V Compound Semiconductor Interfaces;Robinson,1985

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Homogeneous barrier height temperature dependence of Au/n-type GaAs Schottky diode;Indian Journal of Physics;2023-11-15

4. Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence;IEEE Transactions on Electron Devices;2023-09

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