Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact top‐GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105143
Reference13 articles.
1. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system
2. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
3. Nonspiking ohmic contact top‐GaAs by solid‐phase regrowth
4. Thermally stable ohmic contacts ton‐type GaAs. III. GeInW and NiInW contact metals
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1. Related Electrical and Metallurgical Properties of Pd/Zn/Pd/Ge and Pd/Zn/Pd/Au Contact Systems to p-InGaP;physica status solidi (a);2001-03
2. p-Ohmic Contact Study for Intracavity Contacts in AlGaAs/GaAs Vertical Cavity Surface-Emitting Lasers;Journal of The Electrochemical Society;2001
3. The formation of ohmic and Schottky enhanced contacts to III–V compound semiconductors via the exchange mechanism: A combined thermodynamic and kinetic model;Journal of Applied Physics;1998-10-15
4. A survey of ohmic contacts to III-V compound semiconductors;Thin Solid Films;1997-10
5. Effect of layer structure on the electrical properties of contacts to p-type In0.53Ga0.47As/InP;Thin Solid Films;1997-04
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