Raman scattering analysis of InGaAs/AlAsSb short-period superlattices
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy
2. Proc. 4th Int. Conf. InP and Related Mater. April 1992, Rhode Island, USA;Asai,1992
3. Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures
4. 1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
5. Compositional dependence of AlAsySb1−yternaries on the ratio of Sb/As fluxes and on the substrate temperature
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4. Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures;physica status solidi (a);2004-01
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