1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy

Published:1999-02-28 Issue:Part 1, No. 2B Volume:38 Page:1286-1289
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mozume Teruo,Yoshida Haruhiko,Neogi Arup,Kudo Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μm;Applied Physics Letters;2015-02-23

2. Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers;IEEE Photonics Technology Letters;2008-12

3. Energy levels and intersubband transitions inInGaAsN∕AlGaAsquantum wells;Physical Review B;2007-01-17

4. Electroabsorption Modulator Using Intersubband Transitions in GaN–AlGaN–AlN Step Quantum Wells;IEEE Journal of Quantum Electronics;2006-08

5. Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers;Journal of Crystal Growth;2005-05

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