Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers-Reference-Cited by-同舟云学术

Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

Published:2005-05 Issue:1-4 Volume:278 Page:183-187
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kasai J.,Mozume T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Intersubband Transitions in Quantum Wells;Rosencher,1992

2. Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy

3. 1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy

4. Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

5. T. Mozume, N. Georgiev, T. Simoyama, A.V. Gopal, H. Ishikawa, Post Deadline Papers of 14th International Conference of Indium Phosphide and Related Materials, Stockholm, Sweden, 2002.

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