Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells
2. Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier
3. T. Kurosu, et al., OFC/NFOEC 2012, PDP5C.10.
4. R Akimoto, H. Kuwatsuka, S. Gozu, T. Mozume, H. Ishikawa, ECOC 2012, We.2.E.6.
5. InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm
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3. Evaluation of second harmonic generation susceptibility in a delta-doped AlGaAs/GaAs asymmetric Gaussian potential;Micro and Nanostructures;2022-03
4. Theoretical analysis of intersubband optical absorption in asymmetric AlInN/GaN/AlInN quantum well heterostructures;Optik;2021-12
5. Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure;Semiconductors;2020-06-30
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