InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells
2. T. Kurosu, et al., OFC/NFOEC 2012, PDP5C.10.
3. R Akimoto, H. Kuwatsuka, S. Gozu, T. Mozume, H. Ishikawa, ECOC 2012, We.2.E.6.
4. Near-infrared intersubband transitions in InGaAs–AlAs–InAlAs double quantum wells
5. Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
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1. Hydrostatic pressure and temperature effects on nonlinear optical properties in harmonic-Gaussian asymmetric double quantum wells;Physica Scripta;2024-03-18
2. The effect of structure parameters and static electric field on the nonlinear optical properties of triple InGaAs/GaAs quantum well;Journal of Molecular Structure;2023-02
3. Evaluation of second harmonic generation susceptibility in a delta-doped AlGaAs/GaAs asymmetric Gaussian potential;Micro and Nanostructures;2022-03
4. Theoretical analysis of intersubband optical absorption in asymmetric AlInN/GaN/AlInN quantum well heterostructures;Optik;2021-12
5. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates;Japanese Journal of Applied Physics;2018-04-06
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