Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells
2. Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells
3. All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well
4. Mechanism of ultrafast modulation of the refraction index in photoexcitedInxGa1−xAs/AlAsySb1−yquantum well waveguides
5. S. Gozu, et al., J. Appl. Phys. submitted for publication.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates;Japanese Journal of Applied Physics;2018-04-06
2. Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices;Journal of Crystal Growth;2015-09
3. Picosecond Carrier Spin Relaxation in In0.8Ga0.2As/AlAs/AlAs0.56Sb0.44Coupled Double Quantum Wells;Japanese Journal of Applied Physics;2013-04-01
4. Ultrafast electron dynamics of intersubband excitation concerning cross-phase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well;Applied Physics Letters;2011-06-20
5. Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2010-09
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