Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363896
Reference13 articles.
1. Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells
2. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=
3. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
4. High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed Bragg mirror on InP substrate for 1.3–1.55 [micro sign]m wavelengths
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2. Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells;Journal of Applied Physics;2014-03-28
3. Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure;Applied Physics Letters;2010-09-13
4. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures;physica status solidi (c);2003-08-27
5. Magnetotransport and electronic subband studies of Si delta-doped In0.1Ga0.9As/GaAs strained single quantum wells;Applied Surface Science;2001-02
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