Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/9/1.4896192.pdf?itemId=/content/aip/journal/adva/4/9/10.1063/1.4896192&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference24 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
3. Quantum and transport lifetimes in a tunable low-density AlGaN∕GaN two-dimensional electron gas
4. Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures
5. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
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1. Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor;Japanese Journal of Applied Physics;2022-11-14
2. Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions;Applied Physics Letters;2022-11-07
3. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11
4. Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor;physica status solidi (b);2020-04
5. A Low-Power Microwave HEMT $LC$ Oscillator Operating Down to 1.4 K;IEEE Transactions on Microwave Theory and Techniques;2019-07
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