Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness-Reference-Cited by-同舟云学术

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Published:2014-09 Issue:9 Volume:4 Page:097124
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mishra Manna Kumari,Sharma Rajesh K.,Manchanda Rachna,Bag Rajesh K.,Thakur Om Prakash,Muralidharan Rangarajan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/9/1.4896192.pdf?itemId=/content/aip/journal/adva/4/9/10.1063/1.4896192&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference24 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

3. Quantum and transport lifetimes in a tunable low-density AlGaN∕GaN two-dimensional electron gas

4. Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

5. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

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4. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11

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