Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor-Reference-Cited by-同舟云学术

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Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

Published:2020-04 Issue:4 Volume:257 Page:1900589
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Ito Tadatoshi¹,Sakamoto Ryota¹,Isono Tatsuya¹,Yao Yongzhao²,Ishikawa Yukari²,Okada Narihito¹^ORCID,Tadatomo Kazuyuki¹

Affiliation:

1. Graduate School of Sciences and Technology for InnovationYamaguchi University 2-16-1 Tokiwadai Ube Yamaguchi 755-8611 Japan

2. Materials Research & Development LaboratoryJapan Fine Ceramics Center (JFCC) 2-4-1 Mutsuno Atsuta Nagoya Aichi 456-0023 Japan

Funder

New Energy and Industrial Technology Development Organization

Murata Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900589

Reference40 articles.

1. Growth of millimeter wave AlN/GaN heterostructures by MOCVD

2. Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates

3. Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth

4. Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD

5. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy;physica status solidi (a);2024-06-27

2. Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures;physica status solidi (a);2024-06-24

3. Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties;APL Materials;2023-12-01

4. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates;Japanese Journal of Applied Physics;2023-10-09

5. Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs;physica status solidi (a);2023-07-28

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