Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3490248
Reference19 articles.
1. Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation
2. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
3. Power electronics on InAlN/(In)GaN: Prospect for a record performance
4. Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
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1. Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures;physica status solidi (RRL) – Rapid Research Letters;2023-08-22
2. Polarization-Induced 2D Electron and Holes in Undoped AlN/GaN/AlN Heterostructures;Springer Theses;2022
3. Zero-field spin splitting in AlInN/GaN heterostructures;Physica B: Condensed Matter;2020-10
4. Magneto-transport property of an AlInN/AlN/GaN heterostructure;Physica B: Condensed Matter;2019-06
5. Electron transport in N-polar GaN-based heterostructures;Applied Physics Letters;2019-04-22
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