Compositional dependence of AlAsySb1−yternaries on the ratio of Sb/As fluxes and on the substrate temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358586
Reference9 articles.
1. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
2. InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm
3. Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys
4. 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
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