Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338352
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1. OH-absorption in fluoride glass infra-red fibres
2. Linear electro‐optic effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
3. Linear electro‐optic effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
4. Linear electro‐optic effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
5. Linear electro‐optic effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
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