Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. 1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
2. Nonlinearity and recovery time of 1.55 [micro sign]m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells
3. Optical and Structural Characterization of InGaAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
4. Interface control of InGaAs/AlAsSb heterostructures
5. Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
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