Fabrication and band alignment of pseudomorphic Si1 − C , Si1 − − Ge C and coupled quantum well structures on Si substrates-Reference-Cited by-同舟云学术

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Fabrication and band alignment of pseudomorphic Si1 − C , Si1 − − Ge C and coupled quantum well structures on Si substrates

Published:1997-05 Issue: Volume:175-176 Page:451-458
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Brunner K.,Winter W.,Eberl K.,Jin-Phillipp N.Y.,Phillipp F.

Funder

Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Heterojunction bipolar transistors using Si-Ge alloys

2. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

3. High hole mobility in SiGe alloys for device applications

4. Photoluminescence in short-period Si/Ge strained-layer superlattices

5. Synthesis of Si1−yCyalloys by molecular beam epitaxy

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1. Precise Description of the Variances of Electronic Bands in the Si1-yCy Alloys Calculated with a Modified Becke-Johnson Exchange Potential;Silicon;2019-04-05

2. Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications;Journal of Computational and Applied Mathematics;2014-03

3. Carbon Doping of SiGe;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

4. Carbon Doping of SiGe;Silicon Heterostructure Handbook;2005-11

5. Composition dependent energy band gaps for the ternary alloy Si1−x−yGexCy;physica status solidi (b);2003-11

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