1. KE Ehwald, D Knoll, B Heinemann, KChang, J Kirchgessner, R Mauntel, Ik-Sung Lim, J Steele, B Tillack, A Wolff, K Blum, W Winkler, M Pierschel, F Herzel, U Jagdhold, P Schley, R Barth, and HJ Osten. Modular integration of high-performance SiGe:C-HBTs in a deep submicron, epi-free CMOS process. Technical Digest of the IEEE International Electron Device Meeting, Washington, 1999, pp.561-564.
2. Si1-x-yGexCy growth and properties of the ternary system