Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms-Reference-Cited by-同舟云学术

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Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

Published:2014-10-14 Issue:14 Volume:116 Page:144904
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lin Yiheng¹,Yasuda Hiroshi²,Schiekofer Manfred³,Benna Bernhard³,Wise Rick²,Xia Guangrui (Maggie)¹

Affiliation:

1. Department of Materials Engineering, The University of British Columbia, 309-6350 Stores Rd, Vancouver, British Columbia V6T 1Z4, Canada

2. Texas Instruments, 13121 TI Blvd., Dallas, Texas 75243, USA

3. Texas Instruments Deutschland GmbH, Haggertystrasse 1, 85356 Freising, Germany

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897498

Reference29 articles.

1. (Invited) Atomically Controlled CVD Processing for Doping in Future Si-Based Devices

2. (Invited) Atomic Control of Doping during Si Based Epitaxial Layer Growth Processes

3. Millisecond annealing of high-performance SiGe HBTs

4. Point defects and dopant diffusion in silicon

5. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer;Journal of Applied Physics;2024-06-17

2. First-principle calculations to investigate electronic and optical properties of carbon-doped silicon;Vacuum;2024-01

3. Phosphorus diffusion and deactivation during SiGe oxidation;Journal of Applied Physics;2023-04-03

4. The aggregation phenomenon of impurity atoms in Si and the properties of C-doped Si studied by first-principle calculations;Vacuum;2022-11

5. The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C;Journal of Materials Science;2015-10-13

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