Photoluminescence in short-period Si/Ge strained-layer superlattices
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.64.1055/fulltext
Reference28 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices
3. Symmetrically strained Si/Ge superlattices on Si substrates
4. Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
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