Role of substrate strain to tune energy bands–Seebeck relationship in semiconductor heterostructures
Author:
Affiliation:
1. Ann and H.J. Smead Aerospace Engineering Sciences, University of Colorado Boulder, Boulder, Colorado 80303, USA
Funder
Defense Advanced Research Projects Agency
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0031523
Reference131 articles.
1. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes
2. Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
3. Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots
4. Uniaxial strain effects on the optoelectronic properties of GaN nanowires
5. Strain Engineering to Modify the Electrochemistry of Energy Storage Electrodes
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