Direct-bandgap light-emitting germanium in tensilely strained nanomembranes-Reference-Cited by-同舟云学术

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Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Published:2011-11-14 Issue:47 Volume:108 Page:18893-18898
ISSN:0027-8424
Container-title:Proceedings of the National Academy of Sciences
language:en
Short-container-title:Proceedings of the National Academy of Sciences

Author:

Sanchez-Perez J. R.,Boztug C.,Chen F.,Sudradjat F. F.,Paskiewicz D. M.,Jacobson R.,Lagally M. G.,Paiella R.

Publisher

Proceedings of the National Academy of Sciences

Subject

Multidisciplinary

Reference29 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Elastically relaxed free-standing strained-silicon nanomembranes

3. Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys

4. Influence of Strain on the Conduction Band Structure of Strained Silicon Nanomembranes

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2. Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations;Electrochimica Acta;2024-07

3. Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate;Advanced Optical Materials;2024-06-24

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