Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots-Reference-Cited by-同舟云学术

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Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Published:2014-05-16 Issue:7 Volume:29 Page:075013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yahyaoui M,Sellami K,Ben Radhia S,Boujdaria K,Chamarro M,Eble B,Testelin C,Lemaître A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=7/a=075013/pdf

Reference67 articles.

1. Electronic structure of quantum dots

2. Size and density control of InAs quantum dot ensembles on self-assembled nanostructured templates

3. Self-Assembled Quantum Dots

4. Electron-phonon relaxation rates in InGaAs–InP and HgCdTe–CdTe quantum wells

5. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

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5. Effects of pressure, temperature, and electric field on linear and nonlinear optical properties of InxGa1-xAs/GaAs strained quantum dots under indium segregation and In/Ga intermixing phenomena;Physica B: Condensed Matter;2023-06

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