RDS characterization of GaAsSb and GaSb grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors
2. Heavily carbon-doped GaAsSb grown on InP for HBT applications
3. Raman and dielectric function spectra of strained GaAs1−xSbx layers on InP
4. A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping
5. P-type carbon doping of GaSb
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