Raman and dielectric function spectra of strained GaAs1−xSbx layers on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373572
Reference14 articles.
1. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
2. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
3. Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55μm emission
4. Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate
5. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
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1. Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region;AIP Advances;2021-02-01
2. Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials;AIP Advances;2018-11
3. Ellipsometric studies of AlxGa1−xAs0.5Sb0.5 (0.0 ≤ x ≤ 0.6) alloys lattice-matched to InP(100);Journal of Applied Physics;2014-01-14
4. Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers;Journal of Applied Physics;2013-11-21
5. Structural and Optical Properties of GaAs 0.5 Sb 0.5 and In 0.5 Ga 0.5 As 0.5 Sb 0.5 : ab initio Calculations for Pure and Doped Materials;Chinese Physics Letters;2012-03
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