Structural and Optical Properties of GaAs 0.5 Sb 0.5 and In 0.5 Ga 0.5 As 0.5 Sb 0.5 : ab initio Calculations for Pure and Doped Materials
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/3/037302/pdf
Reference24 articles.
1. Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers
2. Ab-initio investigation of structural, electronic and optical properties of InxGa1−xAs, GaAs1−yPy ternary and InxGa1−xAs1−yPy quaternary semiconductor alloys
3. Raman and dielectric function spectra of strained GaAs1−xSbx layers on InP
4. Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1–xGaxAsySb1–y epilayer on GaSb and InAs
5. Spectroscopic evidence that oxygen suppresses Si incorporation into vapor phase epitaxial InP
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3. Structural, elastic, thermodynamic, electronic, and optical properties of $$\hbox {CaMg}_{2}\hbox {AN}_{3}$$($$\hbox {A}=\hbox {Al}$$ and Ga): ab initio investigation;The European Physical Journal B;2021-04
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