Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1–xGaxAsySb1–y epilayer on GaSb and InAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference57 articles.
1. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
2. Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment
3. Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm Wavelength
4. Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature
5. Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm
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