Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55μm emission-Reference-Cited by-同舟云学术

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Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55μm emission

Published:1999-05 Issue: Volume:201-202 Page:1024-1027
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Genty Frédéric,Almuneau Guilhem,Chusseau Laurent,Arnaud Wilk ,Gaillard Serge,Boissier Guilhem,Grech Pierre,Jacquet Joel

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Molecular beam epitaxy growth of 1.3 [micro sign]m high-reflectivity AlGaAsSb/AlAsSb Bragg mirror

2. Design and analysis of double-fused 1.55-μm vertical-cavity lasers

3. Optically pumped, monolithic, all-epitaxial 1.56 [micro sign]m vertical cavity surface emitting laser using Sb-based reflectors

4. GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range

5. MBE Growth of GaAs1-xSbxand InyGa1-yAs and Application of BCF Theory to Study the Alloy Composition

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1. Photoluminescence of GaAsSb/AlAsSb superlattices for investigating band structure;Journal of Luminescence;2023-11

2. Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures;Science China Physics, Mechanics & Astronomy;2014-10-17

3. Dark current filtering in unipolar barrier infrared detectors;Applied Physics Letters;2011-09-19

4. III-V and Related Semiconductor Materials;The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities;2011-03-30

5. Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs 1−y Sb y Grown on GaAs by Molecular Beam Epitaxy;Chinese Physics Letters;2008-12

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