Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs 1−y Sb y Grown on GaAs by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/12/079/pdf
Reference16 articles.
1. Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
2. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
3. Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base
4. Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
5. Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates
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1. Theoretical Estimation of Temperature-Dependent Surface Tension of Liquid Antimony, Boron, and Sulfur;Metallurgical and Materials Transactions B;2011-04-02
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