Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Design and simulation of low-threshold antimonide intersubband lasers
2. Design of double and triple quantum wells for InGaAs-AlAsSb intersubband unipolar semiconductor lasers
3. Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy
4. InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region
5. InAs/AlSb quantum cascade lasers operating at 10 μm
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1. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions;Journal of Crystal Growth;2015-08
2. Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb ‘W’-Type QW Laser on InP Substrate;IEEE Photonics Technology Letters;2015-02-01
3. Epitaxy for Energy Materials;Handbook of Crystal Growth;2015
4. 2–3 μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates;Journal of Applied Physics;2010-11-15
5. Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs 1−y Sb y Grown on GaAs by Molecular Beam Epitaxy;Chinese Physics Letters;2008-12
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