2–3 μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3506427
Reference21 articles.
1. Near- and mid-infrared laser monitoring of industrial processes, environment and security applications
2. Infrared (2–12 μm) solid-state laser sources: a review
3. Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
4. Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing
5. 2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy
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1. Comparative study of optical characteristics of SQW and DQWs InGaAs/GaAsSb/AlAsSb based compressively strained heterostructures;Micro and Nanostructures;2023-03
2. Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: The role of intense laser fields and position-dependent effective mass;Physica E: Low-dimensional Systems and Nanostructures;2022-08
3. Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate;Photonics;2018-10-02
4. Optimization of Type-II ‘W’ shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature;Superlattices and Microstructures;2017-12
5. Next-generation mid-infrared sources;Journal of Optics;2017-11-14
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