2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1289799
Reference10 articles.
1. Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength
2. 1.95-/spl mu/m strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers
3. InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 /spl mu/m
4. 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
5. Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-lnGaAsP quantum-well lasers
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