Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121561
Reference10 articles.
1. 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
2. InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 /spl mu/m
3. InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm
4. Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers
5. Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes
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