Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate-Reference-Cited by-同舟云学术

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Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

Published:2016-09 Issue: Volume:449 Page:86-91
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mitsuhara M.,Watanabe N.,Yokoyama H.,Iga R.,Shigekawa N.

Funder

Core Research for Evolutionary Science and Technology (CREST) programs of the Japan Science and Technology Agency (JST)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Japanese R&D Activities of High Efficiency III-V Compound Multi-Junction and Concentrator Solar Cells

2. Characterization of the bonding strength and interface current of p-Si/n-InP wafers bonded by surface activated bonding method at room temperature

3. Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

4. Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions

5. Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence-based quality characterization of quantum wells for solar cell applications;Journal of Crystal Growth;2017-04

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