Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions
Author:
Affiliation:
1. Department of Electrical EngineeringOsaka City University3‐3‐138 SugimotoSumiyoshi‐kuOsaka558‐8585Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.1553
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1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
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