2D simulation analysis of electron distribution in p+-Si/n+-GaAs heterojunction using Archimedes 2.0.1, Monte Carlo simulator-Reference-Cited by-同舟云学术

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2D simulation analysis of electron distribution in p+-Si/n+-GaAs heterojunction using Archimedes 2.0.1, Monte Carlo simulator

Published:2020 Issue: Volume: Page:
ISSN:0094-243X
Container-title:THE 2ND INTERNATIONAL CONFERENCE ON PHYSICAL INSTRUMENTATION AND ADVANCED MATERIALS 2019
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Author:

Puspita Dita,Rohman Lutfi,Subekti Agus,Trilaksana Herri

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0035215

Reference14 articles.

1. ZnSe nanowire/Si p–n heterojunctions: device construction and optoelectronic applications

2. Zhang, X., Wu, D. and Geng, H. (2017) ‘Semiconductor One-Dimensional Nanostructures and,’ MDPI.

3. III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

4. Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions

5. Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding

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