Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105029
Reference5 articles.
1. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
2. Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength
3. Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers
4. Band structure engineering of semiconductor lasers for optical communications
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