Te incorporation in GaAs1−xSbxnanowires and p-i-n axial structure-Reference-Cited by-同舟云学术

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Te incorporation in GaAs1−xSbxnanowires and p-i-n axial structure

Published:2016-10-28 Issue:12 Volume:31 Page:125001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ahmad Estiak,Kasanaboina P K,Karim M R,Sharma M,Reynolds C L,Liu Y,Iyer S

Funder

Army Research Office

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=12/a=125001/pdf

Reference66 articles.

1. Semiconductor Nanowires: From Self-Organization to Patterned Growth

2. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

3. Blank page [back cover]

4. Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells

5. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

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1. Heterostructure axial GaAsSb ensemble near-infrared p–i–n based axial configured nanowire photodetectors;Nanotechnology;2023-04-18

2. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method;Crystals;2022-12-16

3. Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization;Nanotechnology;2022-07-26

4. Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors;Nanoscale Advances;2022

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